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IXFH12N100F
IXFT12N100F
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXFH) Outline
g fs
C iss
V DS = 10V, I D = 0.5 ? I D25 , Note 1
8
12
2700
S
pF
C oss
C rss
t d(on)
t r
t d(off)
t f
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 2 Ω (External)
305
93
12
9.8
31
12
pF
pF
ns
ns
ns
ns
e
? P
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
(TO-247)
77
16
42
0.21
nC
nC
nC
0.42 ° C /W
° C /W
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
D 20.80 21.46
E 15.75 16.26
.819 .845
.610 .640
Source-Drain Diode
T J = 25 ° C unless otherwise specified)
I S V GS = 0V
Characteristic Values
Min. Typ. Max.
12
A
e 5.20 5.72
L 19.81 20.32
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
I SM
V SD
Repetitive, pulse width limited by T JM
I F = I S , V GS = 0V, Note 1
48
1.5
A
V
S 6.15 BSC
242 BSC
t rr
I F = 12A, -di/dt = 100A/ μ s
250 ns
TO-268 Outline
Q RM
I RM
V R = 100V, V GS = 0V
0.8
7.0
μ C
A
Note: 1. Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
Min Recommended Footprint
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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